Discrete Semiconductor Products

PJD14P06A-AU_L2_000A1

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60V P-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJD14P06A-AU_L2_000A1

Current - Continuous Drain (Id) @ 25°C	3.2 A, 14 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	785 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	40 W, 2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	110 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
Panjit International Inc. PJD14P10A_L2_00001	2.5 A	14 A	P-Channel	40.7 nC	4.5 V 10 V	100 V	MOSFET (Metal Oxide)	3 V	20 V	140 mOhm	Surface Mount	2 W 60 W	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3	2298 pF	-55 °C	150 °C
Panjit International Inc. PJD14P06A-AU_L2_000A1	3.2 A 14 A		P-Channel		4.5 V 10 V	60 V	MOSFET (Metal Oxide)	2.5 V	20 V		Surface Mount	2 W 40 W	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3		-55 °C	150 °C	AEC-Q101	Automotive	10 nC	785 pF	110 mOhm

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General part information

P-Channel 60 V 3.2A (Ta), 14A (Tc) 2W (Ta), 40W (Tc) Surface Mount TO-252AA

Technical documentation and resources