Discrete Semiconductor Products

VSB20L45-M3/73

Obsolete

DIODE SCHOTTKY 45V 6.5A P600

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Discrete Semiconductor Products

Obsolete

DIODE SCHOTTKY 45V 6.5A P600

Technical Specifications

Parameters and characteristics for this part

Specification	VSB20L45-M3/73

Capacitance @ Vr, F	2050 pF
Current - Average Rectified (Io)	6.5 A
Current - Reverse Leakage @ Vr	1.2 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	P600, Axial
Speed	200 mA, 500 ns
Supplier Device Package	P600
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	45 V
Voltage - Forward (Vf) (Max) @ If	580 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Package / Case	Technology	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Average Rectified (Io)	Speed
Vishay General Semiconductor - Diodes Division VSB20L45-M3/54	45 V	390 mV	2470 pF	5 mA	P600 Axial	Schottky	P600	150 °C	-40 °C	Through Hole	7.5 A	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VSB20L45-M3/73	45 V	580 mV	2050 pF	1.2 mA	P600 Axial	Schottky	P600	150 °C	-40 °C	Through Hole	6.5 A	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 45 V 6.5A Through Hole P600

Technical documentation and resources