Discrete Semiconductor Products

RS3K-M3/9AT

Active

DIODE GEN PURP 800V 3A DO214AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 800V 3A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	RS3K-M3/9AT

Capacitance @ Vr, F	34 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Speed	Voltage - Forward (Vf) (Max) @ If	Technology	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division RS3K-M3/57T	Surface Mount	3 A	10 µA	DO-214AB SMC	500 ns	DO-214AB (SMC)	200 mA 500 ns	1.3 V	Standard	34 pF	150 °C	-55 °C	800 V
Vishay General Semiconductor - Diodes Division RS3K-E3/9AT	Surface Mount	3 A	10 µA	DO-214AB SMC	500 ns	DO-214AB (SMC)	200 mA 500 ns	1.3 V	Standard	34 pF	150 °C	-55 °C	800 V
Vishay General Semiconductor - Diodes Division RS3K-M3/9AT	Surface Mount	3 A	10 µA	DO-214AB SMC	500 ns	DO-214AB (SMC)	200 mA 500 ns	1.3 V	Standard	34 pF	150 °C	-55 °C	800 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 3A Surface Mount DO-214AB (SMC)

Technical documentation and resources