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TK56A12N1 - 12V - 300V MOSFETs, N-ch MOSFET, 120 V, 0.0075 Ω@10V, TO-220SIS, U-MOSⅧ-H
Discrete Semiconductor Products

TK72A12N1,S4X

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 120 V, 0.0045 Ω@10V, TO-220SIS, U-MOSⅧ-H

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TK56A12N1 - 12V - 300V MOSFETs, N-ch MOSFET, 120 V, 0.0075 Ω@10V, TO-220SIS, U-MOSⅧ-H
Discrete Semiconductor Products

TK72A12N1,S4X

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 120 V, 0.0045 Ω@10V, TO-220SIS, U-MOSⅧ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTK72A12N1,S4X
Current - Continuous Drain (Id) @ 25°C72 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]130 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]8100 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)45 W
Rds On (Max) @ Id, Vgs [Max]4.5 mOhm
Supplier Device PackageTO-220SIS
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 50$ 4.21
Tube 1$ 3.60
10$ 2.36
100$ 1.65
500$ 1.35
1000$ 1.25
2000$ 1.22

Description

General part information

TK72A12N1 Series

12V - 300V MOSFETs, N-ch MOSFET, 120 V, 0.0045 Ω@10V, TO-220SIS, U-MOSⅧ-H

Documents

Technical documentation and resources

Avalanche energy calculation

Application Note

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter

Application Note

Structures and Characteristics: Power MOSFET Application Notes

Application Note

MOSFET Self-Turn-On Phenomenon

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system

Application Note

MOSFET SPICE model grade

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1

Application Note

Maximum Ratings: Power MOSFET Application Notes

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices

Application Note

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes

Application Note

Derating of the MOSFET Safe Operating Area

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes

Application Note

Calculating the Temperature of Discrete Semiconductor Devices

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes

Application Note

Motor Control (Vacuum Cleaners)

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode

Application Note

TK72A12N1 Data sheet/English

Data sheet

Hints and Tips for Thermal Design for Discrete Semiconductor Devices

Application Note

Hints and Tips for Thermal Design part3

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes

Application Note

Resonant Circuits and Soft Switching

Application Note

TK72A12N1 Data sheet/Japanese

Data sheet

Selection Guide MOSFETs 2025 Rev1.0

Catalog

Simplified CFD Model Application Note

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes

Application Note

RC Snubbers for Step-Down Converters

Application Note

Electrical Characteristics: Power MOSFET Application Notes

Application Note

MOSFET Secondary Breakdown

Application Note