Specification	BR25G640FVM-3GTR

Clock Frequency	20 MHz
Memory Format	EEPROM
Memory Interface	SPI
Memory Organization	8K x 8
Memory Size	64 Kbit
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	8-MSOP, 8-VSSOP
Supplier Device Package	8-MSOP
Technology	EEPROM
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	1.6 V
Write Cycle Time - Word, Page [custom]	5 ms
Write Cycle Time - Word, Page [custom]	5 ms

BR25G640 Series

Part	Memory Interface	Supplier Device Package	Memory Organization	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Memory Type	Mounting Type	Memory Format	Technology	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Clock Frequency	Memory Size	Package / Case	Package / Case
Rohm Semiconductor BR25G640NUX-3TR	SPI	VSON008X2030	8K x 8	5.5 V	1.6 V	8-UFDFN Exposed Pad	85 C	-40 ¯C	Non-Volatile	Surface Mount	EEPROM	EEPROM	5 ms	5 ms	20 MHz	64 Kbit
Rohm Semiconductor BR25G640F-3GE2	SPI	8-SOP	8K x 8	5.5 V	1.6 V	8-SOIC (0.173" 4.40mm Width)	85 C	-40 ¯C	Non-Volatile	Surface Mount	EEPROM	EEPROM	5 ms	5 ms	20 MHz	64 Kbit
Rohm Semiconductor BR25G640FVM-3GTR	SPI	8-MSOP	8K x 8	5.5 V	1.6 V	8-MSOP 8-VSSOP	85 C	-40 ¯C	Non-Volatile	Surface Mount	EEPROM	EEPROM	5 ms	5 ms	20 MHz	64 Kbit
Rohm Semiconductor BR25G640FVT-3GE2	SPI	8-TSSOP-B	8K x 8	5.5 V	1.6 V	8-TSSOP	85 C	-40 ¯C	Non-Volatile	Surface Mount	EEPROM	EEPROM	5 ms	5 ms	20 MHz	64 Kbit	0.173 in	4.4 mm
Rohm Semiconductor BR25G640FJ-3GE2	SPI	8-SOP-J	8K x 8	5.5 V	1.6 V	8-SOIC	85 C	-40 ¯C	Non-Volatile	Surface Mount	EEPROM	EEPROM	5 ms	5 ms	20 MHz	64 Kbit	0.154 in	3.9 mm