Specification	SSM6J512NU,LF

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs [Max]	16.2 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

SSM6J512NU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -12 V, -10 A, 0.0187 Ω@4.5V, SOT-1220(UDFN6B)

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature
Toshiba Semiconductor and Storage SSM6J512NU,LF	1.8 V	8 V	10 V	10 A	12 V	6-UDFNB (2x2)	MOSFET (Metal Oxide)	P-Channel	1 V	19.5 nC	1.25 W	16.2 mOhm	Surface Mount	1400 pF	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -12 V, -10 A, 0.0187 Ω@4.5V, SOT-1220(UDFN6B)

Technical documentation and resources