Discrete Semiconductor Products

BAV302-TR3

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DIODE GP 150V 250MA MICROMELF

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Discrete Semiconductor Products

Active

DIODE GP 150V 250MA MICROMELF

Technical Specifications

Parameters and characteristics for this part

Specification	BAV302-TR3

Capacitance @ Vr, F	1.5 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	100 nA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	2-SMD, No Lead
Qualification	AEC-Q101
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	MicroMelf
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Operating Temperature - Junction [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case	Capacitance @ Vr, F	Mounting Type	Technology	Current - Reverse Leakage @ Vr	Qualification	Supplier Device Package	Current - Average Rectified (Io)	Grade	Reverse Recovery Time (trr)
Vishay General Semiconductor - Diodes Division BAV302-TR3	175 °C	200 mA 500 ns	1 V	2-SMD No Lead	1.5 pF	Surface Mount	Standard	100 nA	AEC-Q101	MicroMelf	250 mA	Automotive	50 ns
Vishay General Semiconductor - Diodes Division BAV302-TR	175 °C	200 mA 500 ns	1 V	2-SMD No Lead	1.5 pF	Surface Mount	Standard	100 nA	AEC-Q101	MicroMelf	250 mA	Automotive	50 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 150 V 250mA Surface Mount MicroMELF

Technical documentation and resources