Discrete Semiconductor Products

UFR8520R

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DIODE GEN PURP 200V 85A DO5

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 85A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	UFR8520R

Capacitance @ Vr, F	675 pF
Current - Average Rectified (Io)	85 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Stud, DO-5, DO-203AB
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-5 (DO-203AB)
Technology	Reverse Polarity, Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	975 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Mounting Type	Current - Average Rectified (Io)	Speed	Capacitance @ Vr, F	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]
Microsemi Corporation UFR8520R	175 ░C	-55 °C	50 ns	975 mV	50 µA	DO-5 (DO-203AB)	Reverse Polarity Standard	Stud Mount	85 A	200 mA 500 ns	675 pF	DO-203AB DO-5 Stud	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 85A Stud Mount DO-5 (DO-203AB)

Technical documentation and resources