Discrete Semiconductor Products

SI4136DY-T1-GE3

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MOSFET N-CH 20V 46A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 20V 46A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4136DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	46 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	4560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	7.8 W, 3.5 W
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI4136DY-T1-GE3	20 V	8-SOIC	3.5 W 7.8 W	2.2 V	N-Channel	4560 pF	110 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	46 A	Surface Mount	4.5 V 10 V	8-SOIC	3.9 mm	0.154 in	20 V

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General part information

N-Channel 20 V 46A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Technical documentation and resources