Discrete Semiconductor Products

SI7403BDN-T1-GE3

Obsolete

MOSFET P-CH 20V 8A PPAK1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 8A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7403BDN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds	430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	9.6 W, 3.1 W
Rds On (Max) @ Id, Vgs	74 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type
Vishay General Semiconductor - Diodes Division SI7403BDN-T1-E3	MOSFET (Metal Oxide)	PowerPAK® 1212-8	-55 °C	150 °C	15 nC	430 pF	Surface Mount	8 V	2.5 V 4.5 V	PowerPAK® 1212-8	20 V	1 V	3.1 W 9.6 W	8 A	74 mOhm	P-Channel
Vishay General Semiconductor - Diodes Division SI7403BDN-T1-GE3	MOSFET (Metal Oxide)	PowerPAK® 1212-8	-55 °C	150 °C	15 nC	430 pF	Surface Mount	8 V	2.5 V 4.5 V	PowerPAK® 1212-8	20 V	1 V	3.1 W 9.6 W	8 A	74 mOhm	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 8A (Tc) 3.1W (Ta), 9.6W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available