Discrete Semiconductor Products

PMFPB8032XP,115

Obsolete

MOSFET P-CH 20V 2.7A HUSON6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 2.7A HUSON6

Technical Specifications

Parameters and characteristics for this part

Specification	PMFPB8032XP,115

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.6 nC
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFDFN Exposed Pad
Power Dissipation (Max)	485 mW, 6.25 W
Rds On (Max) @ Id, Vgs	102 mOhm
Supplier Device Package	6-HUSON (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	FET Feature	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Technology
Nexperia USA Inc. PMFPB8032XP,115	150 °C	-55 °C	Schottky Diode (Isolated)	4.5 V	1 V	P-Channel	550 pF	8.6 nC	6-HUSON (2x2)	6.25 W 485 mW	6-UFDFN Exposed Pad	102 mOhm	2.7 A	12 V	Surface Mount	20 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount 6-HUSON (2x2)

Technical documentation and resources