Discrete Semiconductor Products

HAT2169H-EL-E

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MOSFET N-CH 40V 50A LFPAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 40V 50A LFPAK

Technical Specifications

Parameters and characteristics for this part

Specification	HAT2169H-EL-E

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	6650 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Mounting Type	Technology	Vgs(th) (Max) @ Id [Max]
Renesas Electronics Corporation HAT2169H-EL-E	N-Channel	SC-100 SOT-669	45 nC	6650 pF	40 V	LFPAK	20 V	3.5 mOhm	50 A	4.5 V 10 V	150 °C	Surface Mount	MOSFET (Metal Oxide)	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 50A (Ta) 30W (Tc) Surface Mount LFPAK

Technical documentation and resources