Specification	80SQ045NRL

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-27, DO-201AA
Speed	200 mA, 500 ns
Supplier Device Package	Axial
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	45 V
Voltage - Forward (Vf) (Max) @ If	550 mV

80SQ045N Series

45 V, 8.0 A Axial Lead Schottky Rectifier

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Average Rectified (Io)	Supplier Device Package
ON Semiconductor 80SQ045NRLG	125 °C	-65 C	Through Hole	200 mA 500 ns	Axial DO-201AA DO-27	45 V	1 mA	550 mV	Schottky	8 A	Axial
ON Semiconductor 80SQ045NRL	125 °C	-65 C	Through Hole	200 mA 500 ns	Axial DO-201AA DO-27	45 V	1 mA	550 mV	Schottky	8 A	Axial

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

80SQ045N Series

The Axial Lead Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.