Discrete Semiconductor Products

RGTV00TS65GC11

NRND

INSULATED GATE BIPOLAR TRANSISTOR, 95A I(C), 650V V(BR)CES, N-CHANNEL, TO-247, TO-247N, 3 PIN

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Discrete Semiconductor Products

NRND

INSULATED GATE BIPOLAR TRANSISTOR, 95A I(C), 650V V(BR)CES, N-CHANNEL, TO-247, TO-247N, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	RGTV00TS65GC11

Current - Collector (Ic) (Max) [Max]	95 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	104 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	276 W
Supplier Device Package	TO-247N
Switching Energy	940 µJ, 1.17 mJ
Td (on/off) @ 25°C	142 ns, 41 ns
Test Condition [custom]	400 V, 15 V
Test Condition [custom]	10 Ohm
Test Condition [custom]	50 A
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Current - Collector (Ic) (Max) [Max]	Gate Charge	Supplier Device Package	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	IGBT Type	Package / Case	Mounting Type	Switching Energy
Rohm Semiconductor RGTV00TS65GC11	95 A	104 nC	TO-247N	200 A	41 ns 142 ns	-40 C	175 °C	1.9 V	15 V 400 V	10 Ohm	50 A	276 W	650 V	Trench Field Stop	TO-247-3	Through Hole	1.17 mJ 940 µJ

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 95 A 276 W Through Hole TO-247N

Technical documentation and resources

No documents available