Discrete Semiconductor Products

RGTV00TS65GC11

NRND

IGBTS 650V 50A TO-247N FIELD STP TRNCH IGBT

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Discrete Semiconductor Products

NRND

IGBTS 650V 50A TO-247N FIELD STP TRNCH IGBT

Technical Specifications

Parameters and characteristics for this part

Specification	RGTV00TS65GC11

Current - Collector (Ic) (Max) [Max]	95 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	104 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	276 W
Supplier Device Package	TO-247N
Switching Energy	1.17 mJ, 940 µJ
Td (on/off) @ 25°C [custom]	41 ns
Td (on/off) @ 25°C [custom]	142 ns
Test Condition	10 Ohm, 50 A, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	IGBT Type	Current - Collector Pulsed (Icm)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Gate Charge	Test Condition	Switching Energy	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case
Rohm Semiconductor RGTV00TS65GC11	Trench Field Stop	200 A	175 °C	-40 °C	TO-247N	650 V	Through Hole	1.9 V	41 ns	142 ns	104 nC	10 Ohm 15 V 50 A 400 V	1.17 mJ 940 µJ	95 A	276 W	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 95 A 276 W Through Hole TO-247N

Technical documentation and resources

No documents available