Discrete Semiconductor Products

SIR436DP-T1-GE3

Obsolete

MOSFET N-CH 25V 40A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 40A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR436DP-T1-GE3

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1715 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	50 W, 5 W
Rds On (Max) @ Id, Vgs	4.6 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIR436DP-T1-GE3	N-Channel	4.5 V 10 V	PowerPAK® SO-8	1715 pF	Surface Mount	5 W 50 W	4.6 mOhm	25 V	3 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	20 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 40A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources