Discrete Semiconductor Products

2SD2318TLV

NRND

BIPOLAR TRANSISTORS - BJT D-PAK;BCE NPN SMT HFE RANK V

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Discrete Semiconductor Products

NRND

BIPOLAR TRANSISTORS - BJT D-PAK;BCE NPN SMT HFE RANK V

Technical Specifications

Parameters and characteristics for this part

Specification	2SD2318TLV

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	560
Frequency - Transition	50 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	15 W
Supplier Device Package	CPT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Current - Collector Cutoff (Max) [Max]	Package / Case	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Mounting Type
Rohm Semiconductor 2SD2318TLV	100 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	NPN	1 V	CPT3	15 W	560	60 V	50 MHz	150 °C	3 A	Surface Mount
Rohm Semiconductor 2SD2318TLU	100 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	NPN	1 V	CPT3	15 W	560	60 V	50 MHz	150 °C	3 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 60 V 3 A 50MHz 15 W Surface Mount CPT3

Technical documentation and resources