Discrete Semiconductor Products

V20120S-E3/4W

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DIODE SCHOTTKY 120V 20A TO220-3

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Discrete Semiconductor Products

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DIODE SCHOTTKY 120V 20A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	V20120S-E3/4W

Current - Reverse Leakage @ Vr	300 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	120 V
Voltage - Forward (Vf) (Max) @ If	1.12 V

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Speed	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division V20120S-M3/4W	Through Hole	150 °C	-40 °C	120 V	TO-220-3	Schottky	250 µA	TO-220-3	200 mA 500 ns
Vishay General Semiconductor - Diodes Division V20120S-E3/4W	Through Hole	150 °C	-40 °C	120 V	TO-220-3	Schottky	300 µA	TO-220-3	200 mA 500 ns	1.12 V

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General part information

Diode 120 V 20A Through Hole TO-220-3

Technical documentation and resources