Discrete Semiconductor Products

PMBT5550,215

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TRANS NPN 140V 0.3A TO236AB

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Discrete Semiconductor Products

Active

TRANS NPN 140V 0.3A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMBT5550,215

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60 hFE
Frequency - Transition	300 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max)	140 V

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Grade	Current - Collector (Ic) (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Qualification	Transistor Type	Mounting Type
Freescale Semiconductor - NXP PMBT5550,235	140 V	50 nA	150 °C	Automotive	300 mA	SC-59 SOT-23-3 TO-236-3	250 mV	300 MHz	TO-236AB	60 hFE	250 mW	AEC-Q101	NPN	Surface Mount
Freescale Semiconductor - NXP PMBT5550,215	140 V	50 nA	150 °C	Automotive	300 mA	SC-59 SOT-23-3 TO-236-3	250 mV	300 MHz	TO-236AB	60 hFE	250 mW	AEC-Q101	NPN	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 140 V 300 mA 300MHz 250 mW Surface Mount TO-236AB

Technical documentation and resources