Discrete Semiconductor Products

VS-GB75DA120UP

Obsolete

IGBT MODULE 1200V 658W SOT227

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT MODULE 1200V 658W SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GB75DA120UP

Configuration	Single
Current - Collector Cutoff (Max) [Max]	250 µA
IGBT Type	NPT
Input	Standard
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	SOT-227
Vce(on) (Max) @ Vge, Ic	3.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Current - Collector Cutoff (Max) [Max]	Configuration	Package / Case	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Input	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]
Vishay General Semiconductor - Diodes Division VS-GB75SA120UP	250 µA	Single	SOT-227-4 miniBLOC	NPT	1200 V	Chassis Mount	150 °C	-40 °C	Standard	3.8 V	SOT-227
Vishay General Semiconductor - Diodes Division VS-GB75LA60UF	50 µA	Single	SOT-227-4 miniBLOC	NPT	600 V	Chassis Mount	150 °C	-40 °C	Standard	2 V	SOT-227	109 A	447 W
Vishay General Semiconductor - Diodes Division VS-GB75NA60UF	50 µA	Single	SOT-227-4 miniBLOC	NPT	600 V	Chassis Mount	150 °C	-40 °C	Standard	2 V	SOT-227	109 A	447 W
Vishay General Semiconductor - Diodes Division VS-GB75DA120UP	250 µA	Single	SOT-227-4 miniBLOC	NPT	1200 V	Chassis Mount	150 °C	-40 °C	Standard	3.8 V	SOT-227

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module NPT Single 1200 V 658 W Chassis Mount SOT-227

Technical documentation and resources