Discrete Semiconductor Products

SI1039X-T1-E3

Obsolete

MOSFET P-CH 12V 870MA SC89-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 870MA SC89-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1039X-T1-E3

Current - Continuous Drain (Id) @ 25°C	870 mA
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power Dissipation (Max)	170 mW
Rds On (Max) @ Id, Vgs	165 mOhm
Supplier Device Package	SC-89 (SOT-563F)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	450 mV

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI1039X-T1-E3	-55 °C	150 °C	870 mA	165 mOhm	P-Channel	1.8 V 4.5 V	MOSFET (Metal Oxide)	6 nC	8 V	SOT-563 SOT-666	450 mV	170 mW	SC-89 (SOT-563F)	Surface Mount	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 870mA (Ta) 170mW (Ta) Surface Mount SC-89 (SOT-563F)

Technical documentation and resources