Discrete Semiconductor Products

RFN30TS6SGC11

NRND

DIODE GEN PURP 600V 30A TO247

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Discrete Semiconductor Products

NRND

DIODE GEN PURP 600V 30A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	RFN30TS6SGC11

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	60 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

Part	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Speed	Supplier Device Package	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Mounting Type
Rohm Semiconductor RFN30TS6SGC11	1.55 V	TO-247-3	600 V	60 ns	200 mA 500 ns	TO-247	Standard	30 A	10 µA	150 °C	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	450	$ 2.42