Discrete Semiconductor Products

CMS03(TE12L)

Obsolete

DIODE SCHOTTKY 30V 3A MFLAT

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Discrete Semiconductor Products

Obsolete

DIODE SCHOTTKY 30V 3A MFLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CMS03(TE12L)

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-128
Speed	500 ns, 200 mA
Supplier Device Package	M-FLAT
Supplier Device Package [x]	2.4
Supplier Device Package [y]	3.8
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	450 mV

Diodes, 30 V/3 A Schottky Barrier Diode, M-FLAT

Part	Speed	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Current - Average Rectified (Io)
Toshiba Semiconductor and Storage CMS03(TE12L)	200 mA 500 ns	450 mV	Schottky	SOD-128	M-FLAT	2.4	3.8	500 µA	30 V	-40 °C	150 °C	Surface Mount	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.20

General part information

Diodes, 30 V/3 A Schottky Barrier Diode, M-FLAT

Technical documentation and resources