Discrete Semiconductor Products

SIA477EDJ-T1-GE3

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MOSFET P-CH 12V 12A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 12V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA477EDJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	12 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	87 nC
Input Capacitance (Ciss) (Max) @ Vds	2970 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Rds On (Max) @ Id, Vgs [Max]	14 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Technology	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Type
Vishay General Semiconductor - Diodes Division SIA477EDJ-T1-GE3	MOSFET (Metal Oxide)	PowerPAK® SC-70-6	PowerPAK® SC-70-6	-55 °C	150 °C	12 A	Surface Mount	14 mOhm	1 V	2970 pF	12 V	87 nC	P-Channel

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General part information

P-Channel 12 V 12A (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources

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