Discrete Semiconductor Products

PMN55ENEAX

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MOSFET N-CH 60V 3.6A 6TSOP

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Discrete Semiconductor Products

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MOSFET N-CH 60V 3.6A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMN55ENEAX

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-74, SOT-457
Power Dissipation (Max)	7.5 W, 667 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Grade	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology
Freescale Semiconductor - NXP PMN55ENEAX	2.7 V	N-Channel	13.2 nC	-55 °C	175 ░C	60 mOhm	Surface Mount	7.5 W 667 mW	Automotive	20 V	450 pF	AEC-Q101	60 V	6-TSOP	3.6 A	SC-74 SOT-457	4.5 V 10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 3.6A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP

Technical documentation and resources