Discrete Semiconductor Products
R6006KND3TL1
NRNDRohm Semiconductor
600V 6A TO-252, HIGH-SPEED SWITCHING POWER MOSFET
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Discrete Semiconductor Products
R6006KND3TL1
NRNDRohm Semiconductor
600V 6A TO-252, HIGH-SPEED SWITCHING POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R6006KND3TL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) [Max] | 70 W |
| Rds On (Max) @ Id, Vgs | 830 mOhm |
| Supplier Device Package | TO-252 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6006KND3 Series
R6006KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Documents
Technical documentation and resources