Discrete Semiconductor Products

MBRF10100-E3/4W

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DIODE SCHOTTKY 100V 10A ITO220AC

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Discrete Semiconductor Products

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DIODE SCHOTTKY 100V 10A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	MBRF10100-E3/4W

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	800 mV

Part	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed	Package / Case	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Mounting Type	Technology	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division MBRF10100CT-E3/45	1 Pair Common Cathode	850 mV	100 µA	200 mA 500 ns	TO-220-3 Full Pack Isolated Tab	5 A	100 V	150 °C	-65 C	ITO-220AB	Through Hole	Schottky
Vishay General Semiconductor - Diodes Division MBRF10100-E3/4W		800 mV	100 µA	200 mA 500 ns	TO-220-2 Full Pack Isolated Tab		100 V	150 °C	-65 C	ITO-220AC	Through Hole	Schottky	10 A

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General part information

Diode 100 V 10A Through Hole ITO-220AC

Technical documentation and resources