Discrete Semiconductor Products

PMPB33XN,115

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MOSFET N-CH 30V 4.3A DFN2020MD-6

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Discrete Semiconductor Products

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MOSFET N-CH 30V 4.3A DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB33XN,115

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.6 nC
Input Capacitance (Ciss) (Max) @ Vds	505 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	8.3 W, 1.5 W
Rds On (Max) @ Id, Vgs	47 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Freescale Semiconductor - NXP PMPB33XN,115	-55 °C	150 °C	4.3 A	2.5 V 4.5 V	N-Channel	Surface Mount	30 V	1.5 W 8.3 W	1.2 V	7.6 nC	47 mOhm	MOSFET (Metal Oxide)	DFN2020MD-6	12 V	6-UDFN Exposed Pad	505 pF

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General part information

N-Channel 30 V 4.3A (Ta) 1.5W (Ta), 8.3W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources