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GPI65005DF
Discrete Semiconductor Products

GPI65010DF56

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GaNPower

GANFET N-CH 650V 10A DFN 5X6

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GPI65005DF
Discrete Semiconductor Products

GPI65010DF56

Active
GaNPower

GANFET N-CH 650V 10A DFN 5X6

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationGPI65010DF56
Current - Continuous Drain (Id)10 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)6 V
FET TypeN-Channel
Gate Charge (Max)2.6 nC
Input Capacitance (Ciss) (Max)90 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseDie
Package NameDie
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) Negative-12 V
Vgs (Max) Positive7.5 V
Vgs(th) (Max)1.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 90$ 5.001m+
Tape & Reel (TR) 1$ 5.001m+

CAD

3D models and CAD resources for this part

Description

General part information

GPI65010DF56

N-Channel 650 V 10A Surface Mount Die

Documents

Technical documentation and resources