Discrete Semiconductor Products

NTA4153NT3G

Obsolete

MOSFET N-CH 20V 915MA SC75

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 915MA SC75

Technical Specifications

Parameters and characteristics for this part

Specification	NTA4153NT3G

Current - Continuous Drain (Id) @ 25°C	915 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.82 nC
Input Capacitance (Ciss) (Max) @ Vds	110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-75, SOT-416
Power Dissipation (Max)	300 mW
Rds On (Max) @ Id, Vgs	230 mOhm
Supplier Device Package	SOT-416, SC-75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max) @ Id	1.1 V

Single N-Channel with ESD Protection Small Signal MOSFET 20V, 915mA, 230mΩ

Part	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type
ON Semiconductor NTA4153NT1G	SC-75 SOT-416	20 V	SC-75 SOT-416	-55 °C	150 °C	915 mA	1.5 V 4.5 V	MOSFET (Metal Oxide)	1.1 V	110 pF	6 V	300 mW	1.82 nC	N-Channel	230 mOhm	Surface Mount
ON Semiconductor NTA4153NT3G	SC-75 SOT-416	20 V	SC-75 SOT-416	-55 °C	150 °C	915 mA	1.5 V 4.5 V	MOSFET (Metal Oxide)	1.1 V	110 pF	6 V	300 mW	1.82 nC	N-Channel	230 mOhm	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection SC-75 and SC-89

Technical documentation and resources