Discrete Semiconductor Products

IRL3202L

Unknown

MOSFET N-CH 20V 48A TO262-3

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Discrete Semiconductor Products

Unknown

MOSFET N-CH 20V 48A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRL3202L

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	700 mV

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division IRL3202L	TO-262-3	43 nC	700 mV	Through Hole	2000 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	I2PAK TO-262-3 Long Leads TO-262AA	16 mOhm	48 A	N-Channel	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 48A (Tc) 69W (Tc) Through Hole TO-262-3

Technical documentation and resources