Discrete Semiconductor Products

RJK0230DPA-00#J5A

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MOSFET 2N-CH 25V 20A/50A 8WPAK

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Discrete Semiconductor Products

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MOSFET 2N-CH 25V 20A/50A 8WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0230DPA-00#J5A

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	20 A, 50 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	7.7 nC
Input Capacitance (Ciss) (Max) @ Vds	1650 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	35 W
Power - Max [Min]	15 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	8-WPAK-D
Technology	MOSFET (Metal Oxide)

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature	Package / Case	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Power - Max [Min]	Power - Max [Max]	FET Feature
Renesas Electronics Corporation RJK0230DPA-00#J5A	20 A 50 A	25 V	8-WPAK-D	150 °C	8-PowerVDFN	2 N-Channel (Half Bridge)	1650 pF	7.7 nC	7 mOhm	MOSFET (Metal Oxide)	Surface Mount	15 W	35 W	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	160	$ 1.88

General part information

Mosfet Array 25V 20A, 50A 15W, 35W Surface Mount 8-WPAK-D

Technical documentation and resources

No documents available