Discrete Semiconductor Products

SISS67DN-T1-GE3

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MOSFET P-CH 30V 60A PPAK1212-8S

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Discrete Semiconductor Products

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MOSFET P-CH 30V 60A PPAK1212-8S

Technical Specifications

Parameters and characteristics for this part

Specification	SISS67DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	111 nC
Input Capacitance (Ciss) (Max) @ Vds	4380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	65.8 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)
Vishay General Semiconductor - Diodes Division SISS67DN-T1-GE3	P-Channel	PowerPAK® 1212-8S	111 nC	60 A	4380 pF	Surface Mount	-55 °C	150 °C	5.5 mOhm	PowerPAK® 1212-8S	4.5 V 10 V	65.8 W	2.5 V	30 V	MOSFET (Metal Oxide)	25 V

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General part information

P-Channel 30 V 60A (Tc) 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources