Specification	XPH2R404PS,L1XHQ

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	93 W, 3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	8-SOP Advance
Supplier Device Package [x]	5
Supplier Device Package [y]	5
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	3 V

XPH2R404PS Series

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 90 A, 0.0024 Ω@10V, SOP Advance(WF)

Part	Drain to Source Voltage (Vdss)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Qualification	Technology	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Grade	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature
Toshiba Semiconductor and Storage XPH2R404PS,L1XHQ	40 V	5	8-SOP Advance	5	90 A	N-Channel	2.4 mOhm	AEC-Q101	MOSFET (Metal Oxide)	3 V	Surface Mount	20 V	-8 V	2500 pF	6 V 10 V	Automotive	3 W 93 W	40 nC	8-PowerVDFN	175 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.42

General part information

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 90 A, 0.0024 Ω@10V, SOP Advance(WF)

Technical documentation and resources