Discrete Semiconductor Products

PHU101NQ03LT,127

Obsolete

MOSFET N-CH 30V 75A IPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 75A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHU101NQ03LT,127

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max)	2180 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	IPAK
Power Dissipation (Max)	166 W
Rds On (Max)	5.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Technology	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Vgs(th) (Max)	FET Type	Vgs (Max)	Gate Charge (Max)	Mounting Type	Package / Case	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)
NXP USA Inc. PHU108NQ03LT,127	MOSFET (Metal Oxide)	75 A	6 mOhm 6 mOhm	2 V	N-Channel	20 V	16.3 nC	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	IPAK	10 V	5 V	25 V	-55 °C	175 °C	1375 pF	187 W
NXP USA Inc. PHU101NQ03LT,127	MOSFET (Metal Oxide)	75 A	5.5 mOhm	2.5 V	N-Channel	20 V		Through Hole	IPAK TO-251-3 Short Leads TO-251AA	IPAK	10 V	5 V	30 V	-55 °C	175 °C	2180 pF	166 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 75A (Tc) 166W (Tc) Through Hole IPAK

Technical documentation and resources