Discrete Semiconductor Products

SIUD406ED-T1-GE3

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MOSFET N-CH 30V 500MA PPAK 0806

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Discrete Semiconductor Products

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MOSFET N-CH 30V 500MA PPAK 0806

Technical Specifications

Parameters and characteristics for this part

Specification	SIUD406ED-T1-GE3

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC
Input Capacitance (Ciss) (Max) @ Vds	17 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 0806
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	1.46 Ohm
Supplier Device Package	PowerPAK® 0806
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.1 V

Part	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIUD406ED-T1-GE3	MOSFET (Metal Oxide)	PowerPAK® 0806	1.1 V	1.8 V 4.5 V	Surface Mount	500 mA	-55 °C	150 °C	1.25 W	30 V	0.6 nC	8 V	N-Channel	PowerPAK® 0806	17 pF	1.46 Ohm

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General part information

N-Channel 30 V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806

Technical documentation and resources