Discrete Semiconductor Products

BUK7626-100B,118

Obsolete

MOSFET N-CH 100V 49A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 49A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7626-100B,118

Current - Continuous Drain (Id) @ 25°C	49 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2891 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	157 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	26 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Qualification	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Grade	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max) [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology
Freescale Semiconductor - NXP BUK7626-100B,118	-55 °C	175 ░C	100 V	AEC-Q101	49 A	Surface Mount	2891 pF	Automotive	26 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	38 nC	N-Channel	157 W	D2PAK	10 V	20 V	MOSFET (Metal Oxide)

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General part information

N-Channel 100 V 49A (Tc) 157W (Tc) Surface Mount D2PAK

Technical documentation and resources