Discrete Semiconductor Products

PHB23NQ10LT,118

Obsolete

MOSFET N-CH 100V 23A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 23A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHB23NQ10LT,118

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	1704 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	98 W
Rds On (Max) @ Id, Vgs [Max]	72 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Part	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP PHB23NQ10LT,118	Surface Mount	N-Channel	2 V	23 A	98 W	10 V	5 V	72 mOhm	-55 °C	175 ░C	MOSFET (Metal Oxide)	15 V	D2PAK	100 V	1704 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V 49 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 23A (Tc) 98W (Tc) Surface Mount D2PAK

Technical documentation and resources