Discrete Semiconductor Products

PHB23NQ10LT,118

Obsolete

MOSFET N-CH 100V 23A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 23A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHB23NQ10LT,118

Current - Continuous Drain (Id) (Tc)	23 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	49 nC, 49 nC
Input Capacitance (Ciss) (Max)	1704 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	98 W
Rds On (Max)	72 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max)	2 V

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	FET Type	Technology	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max)	Package Name	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)
NXP USA Inc. PHB23NQ10LT,118	10 V	5 V	72 mOhm	23 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	49 nC 49 nC	100 V	1704 pF	N-Channel	MOSFET (Metal Oxide)	98 W	Surface Mount	2 V	D2PAK	15 V	-55 °C	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 23A (Tc) 98W (Tc) Surface Mount D2PAK

Technical documentation and resources