Discrete Semiconductor Products
BSS87,115
NRNDNexperia USA Inc.
200 V, N-CHANNEL VERTICAL D-MOS TRANSISTOR
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
BSS87,115
NRNDNexperia USA Inc.
200 V, N-CHANNEL VERTICAL D-MOS TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | BSS87,115 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 400 mA |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-243AA |
| Power Dissipation (Max) | 12.5 W, 580 mW |
| Rds On (Max) @ Id, Vgs | 3 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 895 | $ 0.80 | |
Description
General part information
BSS87 Series
200 V, N-channel vertical D-MOS transistor
Documents
Technical documentation and resources