Discrete Semiconductor Products

SIS626DN-T1-GE3

Obsolete

MOSFET N-CH 25V 16A PPAK1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 16A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS626DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1925 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Package / Case	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIS626DN-T1-GE3	PowerPAK® 1212-8	52 W	Surface Mount	1.4 V	PowerPAK® 1212-8	10 V	2.5 V	1925 pF	16 A	25 V	N-Channel	9 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	60 nC	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources