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Technical Specifications
Parameters and characteristics for this part
| Specification | RS1E200GNTB |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 57 A, 20 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16.8 nC |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 25 W, 3 W |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm |
| Supplier Device Package | 8-HSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2283 | $ 1.24 | |
Description
General part information
RS1E200GN Series
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources