Discrete Semiconductor Products

SL04-HE3-18

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DIODE SCHOTTKY 40V 1.1A DO219AB

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Discrete Semiconductor Products

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DIODE SCHOTTKY 40V 1.1A DO219AB

Technical Specifications

Parameters and characteristics for this part

Specification	SL04-HE3-18

Capacitance @ Vr, F	65 pF
Current - Average Rectified (Io)	1.1 A
Current - Reverse Leakage @ Vr	20 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	DO-219AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	10 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-219AB (SMF)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	540 mV

Part	Voltage - Forward (Vf) (Max) @ If	Qualification	Speed	Operating Temperature - Junction [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Grade	Mounting Type	Technology	Capacitance @ Vr, F
Vishay General Semiconductor - Diodes Division SL04-HM3-18	540 mV	AEC-Q101	200 mA 500 ns	175 °C	DO-219AB (SMF)	20 µA	DO-219AB	1.1 A	40 V	10 ns	Automotive	Surface Mount	Schottky	65 pF
Vishay General Semiconductor - Diodes Division SL04-HM3-08	540 mV	AEC-Q101	200 mA 500 ns	175 °C	DO-219AB (SMF)	20 µA	DO-219AB	1.1 A	40 V	10 ns	Automotive	Surface Mount	Schottky	65 pF
Vishay General Semiconductor - Diodes Division SL04-HE3-18	540 mV	AEC-Q101	200 mA 500 ns	175 °C	DO-219AB (SMF)	20 µA	DO-219AB	1.1 A	40 V	10 ns	Automotive	Surface Mount	Schottky	65 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 40 V 1.1A Surface Mount DO-219AB (SMF)

Technical documentation and resources