SQJ942EP-T1_GE3

Active

MOSFET 2N-CH 40V 15A PPAK SO8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2N-CH 40V 15A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ942EP-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	45 A, 15 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	33.8 nC
Gate Charge (Qg) (Max) @ Vgs	19.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	809 pF, 1451 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power - Max	48 W, 17 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	11 mOhm, 22 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.3 V

Part	Grade	Supplier Device Package	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Qualification	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SQJ942EP-T1_GE3	Automotive	PowerPAK® SO-8	Surface Mount	2 N-Channel (Dual)	15 A 45 A	33.8 nC	19.7 nC	809 pF 1451 pF	PowerPAK® SO-8	-55 °C	175 ░C	17 W 48 W	MOSFET (Metal Oxide)	11 mOhm 22 mOhm	2.3 V	AEC-Q101	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 40V 15A (Tc), 45A (Tc) 17W, 48W Surface Mount PowerPAK® SO-8

Technical documentation and resources