Discrete Semiconductor Products

FDPF8N50NZT

Obsolete

ON Semiconductor

MOSFET N-CH 500V 8A TO220F

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Discrete Semiconductor Products

FDPF8N50NZT

Obsolete

ON Semiconductor

MOSFET N-CH 500V 8A TO220F

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDPF8N50NZT

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7360 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	40.3 W
Rds On (Max) @ Id, Vgs	850 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

FDPF8N50NZ Series

Power MOSFET, N-Channel, UniFET<sup>TM</sup> II, 500 V, 8 A, 850 mΩ, TO-220F

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FDPF8N50NZ	25 V	18 nC	TO-220F-3	N-Channel	8 A	TO-220-3 Full Pack	40.3 W	Through Hole	735 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	850 mOhm	5 V	10 V	500 V
ON Semiconductor FDPF8N50NZT	25 V	18 nC	TO-220F-3	N-Channel	8 A	TO-220-3 Full Pack	40.3 W	Through Hole		MOSFET (Metal Oxide)	-55 °C	150 °C	850 mOhm	5 V	10 V	500 V	7360 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDPF8N50NZ Series

UniFETTMII MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Documents

Technical documentation and resources