Specification	1SS417CT,L3F

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	2-SMD, Flat Leads
Speed	200 mA
Speed	Any Speed
Supplier Device Package	fSC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If [Max]	620 mV

1SS417 Series

Diodes, 40 V/0.1 A Schottky Barrier Diode, SOD-882(CST2)

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Capacitance @ Vr, F	Technology	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Speed	Speed	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]
Toshiba Semiconductor and Storage 1SS417,L3M	40 V	Surface Mount	15 pF	Schottky	fSC	620 mV	100 mA	125 °C	200 mA	Any Speed	2-SMD Flat Leads	5 µA
Toshiba Semiconductor and Storage 1SS417CT,L3F	40 V	Surface Mount	15 pF	Schottky	fSC		100 mA	125 °C	200 mA	Any Speed	2-SMD Flat Leads	5 µA	620 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes, 40 V/0.1 A Schottky Barrier Diode, SOD-882(CST2)

Technical documentation and resources