Integrated Circuits (ICs)
IS61WV25616FALL-10TLI
ActiveISSI, Integrated Silicon Solution Inc
SRAM 4MB,HIGH-SPEED/LOW POWER,ASYNC,256K X 16,1.65V-2.2V, 10NS, 44 PIN TSOP II, ROHS
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Integrated Circuits (ICs)
IS61WV25616FALL-10TLI
ActiveISSI, Integrated Silicon Solution Inc
SRAM 4MB,HIGH-SPEED/LOW POWER,ASYNC,256K X 16,1.65V-2.2V, 10NS, 44 PIN TSOP II, ROHS
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Technical Specifications
Parameters and characteristics for this part
| Specification | IS61WV25616FALL-10TLI |
|---|---|
| Access Time | 10 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 256 K |
| Memory Size | 512 kB |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 2.2 V |
| Voltage - Supply [Min] | 1.65 V |
| Write Cycle Time - Word, Page | 10 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS61WV25616FALL Series
SRAM 4MB,HIGH-SPEED/LOW POWER,ASYNC,256K X 16,1.65V-2.2V, 10NS, 44 PIN TSOP II, ROHS
Documents
Technical documentation and resources
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