Discrete Semiconductor Products

TK200F04N1L,LXGQ

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MOSFET N-CH 40V 200A TO220SM

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Discrete Semiconductor Products

Active

MOSFET N-CH 40V 200A TO220SM

Technical Specifications

Parameters and characteristics for this part

Specification	TK200F04N1L,LXGQ

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	214 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	14920 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	375 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	0.9 mOhm
Supplier Device Package	TO-220SM(W)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Vgs (Max)	Grade	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Qualification	Operating Temperature	Package / Case
Toshiba Semiconductor and Storage TK200F04N1L,LXGQ	TO-220SM(W)	6 V 10 V	214 nC	N-Channel	14920 pF	0.9 mOhm	MOSFET (Metal Oxide)	3 V	375 W	20 V	Automotive	Surface Mount	200 A	40 V	AEC-Q101	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 200A (Ta) 375W (Tc) Surface Mount TO-220SM(W)

Technical documentation and resources