Discrete Semiconductor Products

RHU003N03T106

NRND

MOSFET N-CH 30V 300MA UMT3

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Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 300MA UMT3

Technical Specifications

Parameters and characteristics for this part

Specification	RHU003N03T106

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	20 pF
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	200 mW
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	UMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)
Rohm Semiconductor RHU003N03T106	4 V	10 V	UMT3	300 mA	30 V	20 V	N-Channel	MOSFET (Metal Oxide)	20 pF	SC-70 SOT-323	1.2 Ohm	Surface Mount	200 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 300mA (Ta) 200mW (Ta) Surface Mount UMT3

Technical documentation and resources