Discrete Semiconductor Products

AONS66966

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MOSFET N-CH 100V 31.3A/100A 8DFN

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Discrete Semiconductor Products

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MOSFET N-CH 100V 31.3A/100A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AONS66966

Current - Continuous Drain (Id) @ 25°C	31.3 A, 100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5325 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSMD, Flat Leads
Power Dissipation (Max)	6.2 W, 215 W
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	8-DFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

Part	Power Dissipation (Max)	Power Dissipation (Max)	Technology	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)
Alpha & Omega Semiconductor Inc. AONS66920	56.5 W	5 W	MOSFET (Metal Oxide)	8-PowerSMD Flat Leads	150 °C	-55 °C	48 A	17.5 A	50 nC	4.5 V 10 V	2.5 V	2500 pF	20 V	8.2 mOhm	100 V	Surface Mount	N-Channel	8-DFN (5x6)
Alpha & Omega Semiconductor Inc. AONS66966			MOSFET (Metal Oxide)	8-PowerSMD Flat Leads	150 °C	-55 °C		31.3 A 100 A	95 nC	6 V 10 V	3.6 V		20 V	3.6 mOhm	100 V	Surface Mount	N-Channel	8-DFN (5x6)	5325 pF	6.2 W 215 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 31.3A (Ta), 100A (Tc) 6.2W (Ta), 215W (Tc) Surface Mount 8-DFN (5x6)

Technical documentation and resources