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BAS16LS-QYL
Discrete Semiconductor Products

BAS116LS-QYL

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Nexperia USA Inc.

DIODE GP 75V 325MA DFN1006BD-2

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BAS16LS-QYL
Discrete Semiconductor Products

BAS116LS-QYL

Active
Nexperia USA Inc.

DIODE GP 75V 325MA DFN1006BD-2

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS116LS-QYL
Capacitance @ Vr, F2 pF
Current - Average Rectified (Io)325 mA
Current - Reverse Leakage @ Vr5 nA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction150 ¯C
Package / CaseSOD-882
QualificationAEC-Q101
Reverse Recovery Time (trr)3 çs
Speed [Min]200 mA, 500 ns
Supplier Device PackageDFN1006BD-2
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]75 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.25
10$ 0.17
100$ 0.08
500$ 0.07
1000$ 0.05
2000$ 0.04
5000$ 0.04
Digi-Reel® 1$ 0.25
10$ 0.17
100$ 0.08
500$ 0.07
1000$ 0.05
2000$ 0.04
5000$ 0.04
N/A 9160$ 0.28
Tape & Reel (TR) 10000$ 0.03
30000$ 0.03
50000$ 0.03
100000$ 0.03
250000$ 0.02

Description

General part information

BAS116LS-Q Series

Low-leakage diode in an ultra small DFN1006BD-2 (SOD882BD) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.