Discrete Semiconductor Products

ES3JB-HF

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DIODE GP 600V 3A SMB/DO-214AA

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Discrete Semiconductor Products

Active

DIODE GP 600V 3A SMB/DO-214AA

Technical Specifications

Parameters and characteristics for this part

Specification	ES3JB-HF

Capacitance @ Vr, F	45 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.68 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Supplier Device Package	Speed	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Technology	Current - Average Rectified (Io)	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)
Comchip Technology ES3JB-HF	600 V	1.68 V	SMB	DO-214AA	200 mA 500 ns	DO-214AA SMB	Surface Mount	5 µA	Standard	3 A	45 pF	150 °C	-55 °C	35 ns

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General part information

Diode 600 V 3A Surface Mount DO-214AA (SMB)

Technical documentation and resources

No documents available